 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 97289 IRG4PC20UPBF PROVISIONAL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 Industry standard TO-247AC package Lead-Free C VCES = 600V G E VCE(on) typ. = 1.85V @VGE = 15V, IC = 6.5A n-channel C E C G TO-247AC Benefits Generation 4 IGBTs offer highest efficiency available IGBTs optimized for specified application conditions Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs G Gate Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @TC = 25C PD @TC = 100C TJ TSTG Collector-toEmitter Breakdown Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Power Dissipation Power Dissipation C Collector Max. 600 13 6.5 52 52 20 5.0 60 24 -55 to + 150 E Emitter Units V A c d e V mJ W Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw C 300 (0.063 in.) (1.6mm from case) 10lbxin (1.1Nxm) N Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. --- 0.24 --- 6.0 (0.21) Max. 2.1 --- 40 --- Units C/W g (oz) www.irf.com 07/11/07 1 PROVISIONAL IRG4PC20UPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)CES V(BR)ECS Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltagef Min. 600 18 --- --- Typ. Max. Units --- --- 0.69 1.85 2.27 1.87 --- -11 4.3 --- --- --- --- --- --- --- --- 2.1 --- --- 6.0 --- --- 250 2.0 1000 100 -100 nA V V Conditions VGE = 0V, ICE = 250A V(BR)CES/TJ Breakdown Voltage Temp. Coefficient VCE(on) VGE(th) VGE(th)/TJ gfe ICES Collector-to-Emitter Saturation Voltage VGE = 0V, ICE = 1.0A V/C VGE = 0V, ICE = 1.0mA VGE = 15V, ICE = 6.5A V VGE = 15V, ICE = 13A VGE = 15V, ICE = 6.5A, TJ = 150C VCE = VGE, ICE = 250A V mV/C VCE = 100V, ICE = 6.5A S A VCE = 600V, VGE = 0V VCE = 10V, VGE = 0V, TJ = 25C VCE = 600V, VGE = 0V, TJ = 150C VGE = 20V VGE = -20V --- Gate Threshold Voltage Gate Threshold Voltage Coefficient Forward Transconductance Collector-to-Emitter Leakage Current 3.0 --- 1.4 --- --- --- IGES Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage --- --- g Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf E(on) E(off) Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 27 4.5 10 21 13 86 120 0.10 0.12 0.22 20 14 190 140 0.42 7.5 530 39 7.4 41 6.8 16 --- --- 130 180 --- --- 0.4 --- --- --- --- --- --- --- --- --- pF mJ nH ns mJ IC = 6.5A, VCC = 480V VGE = 15V, RG = 50 TJ = 150C Energy losses include "tail" Measured 5mm from package VGE = 0V VCE = 30V = 1.0MHz ns nC VCE = 400V IC = 6.5A VGE = 15Ve IC = 6.5A, VCC = 480V VGE = 15V, RG = 50 TJ = 25C Energy losses include "tail" Repetitive rating; VGE = 20V, pulse width limited by Notes: max. junction temperature. VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 50. Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. 2 www.irf.com PROVISIONAL IRG4PC20UPBF 25 For both: Triangular wave: I 20 Duty cycle: 50% TJ = 125C Tsink = 90C Gate drive as specified Power Dissipation = 13W Load Current ( A ) Clamp voltage: 80% of rated 15 Square wave: 60% of rated voltage 10 I 5 Ideal diodes 0 0.1 1 10 A 100 f, Frequency (kHz) (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) Fig. 1 - Typical Load Current vs. Frequency 100 100 IC , Collector-to-Emitter Current (A) TJ = 25C TJ = 150C 10 IC , Collector-to-Emitter Current (A) 10 TJ = 150C TJ = 25C 1 1 0.1 0.1 1 VGE = 15V 20s PULSE WIDTH 10 0.1 4 6 8 V CC = 10V 5s PULSE WIDTH A 10 12 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics A Fig. 3 - Typical Transfer Characteristics 3 www.irf.com PROVISIONAL IRG4PC20UPBF 14 Maximum DC Collector Current (A) 12 VCE , Collector-to-Emitter Voltage (V) VGE = 15V 2.6 VGE = 15V 80s PULSE WIDTH IC = 13A 10 2.2 8 1.8 6 IC = 6.5A 4 1.4 I C = 3.3A 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 TC , Case Temperature (C) TJ , Junction Temperature (C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 P DM 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 2 t 1 t2 0.01 0.00001 2. Peak TJ = P DM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com PROVISIONAL IRG4PC20UPBF 1000 C, Capacitance (pF) 800 VGE , Gate-to-Emitter Voltage (V) A Cies V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 VCE = 400V I C = 6.5A 16 600 12 Coes 400 8 200 Cres 4 0 1 10 0 0 5 10 15 20 25 A 30 100 VCE, Collector-to-Emitter Voltage (V) Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.23 Total Switching Losses (mJ) VCC VGE TJ IC = 480V = 15V = 25C = 6.5A 0.22 0.21 0.20 0 10 20 30 40 50 A 60 R G , Gate Resistance () Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 PROVISIONAL IRG4PC20UPBF 1.0 0.8 I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) RG TJ V CC V GE = 50 = 150C = 480V = 15V 1000 VGE = 20V GE TJ = 125C 100 0.6 10 SAFE OPERATING AREA 0.4 1 0.2 0.0 0 2 4 6 8 10 12 A 14 0.1 1 10 100 1000 I C , Collector-to-Emitter Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com PROVISIONAL IRG4PC20UPBF L 50V 1000V VC * 0 - 480V D.U.T. RL = 480V 4 X IC@25C c 480F 960V d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L Driver* 50V 1000V VC D.U.T. Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T., VC = 480V A d e c d 90% e VC 90% 10% t d(off) Fig. 14b - Switching Loss Waveforms 10% I C 5% t d(on) tr E on E ts = (Eon +Eoff ) tf t=5s E off www.irf.com 7 PROVISIONAL IRG4PC20UPBF Dimensions are shown in millimeters (inches) TO-247AC Package Outline TO-247AC Part Marking Information @Y6HQG@) UCDTADTA6IADSAQ@"A XDUCA6TT@H7GA GPUA8P9@A$%$& 6TT@H7G@9APIAXXA"$A! DIAUC@A6TT@H7GAGDI@AACA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S ,5)3( A "$C $%AAAAAAAAAAA$& 96U@A8P9@ @6SA A2A! X@@FA"$ GDI@AC TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/07 8 www.irf.com |
Price & Availability of IRG4PC20UPBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |